to-92 plastic-encapsulate transistors 2N5400 transistor (pnp) feature z switching and a mplification in h igh v oltage applications such as t elephony z low c urrent(max. 600ma) z high v oltage(max.130v) maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -130 v v ceo collector-emitter voltage -120 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.6 a p c collector power dissipation 0.625 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax unit collector-base breakdown voltage v (br)cbo i c =-100 a, i e =0 -130 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -120 v emitter-base breakdown voltage v (br)ebo i e = -10 a, i c =0 -5 v collector cut-off current i cbo v cb = -100 v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -3 v, i c =0 -0.1 a h fe1 v ce = -5 v, i c =-1ma 30 h fe2 v ce = -5 v, i c = -10ma 40 180 dc current gain h fe3 v ce = -5 v, i c =-50ma 40 v ce(sat) i c = -10ma, i b = -1ma -0.2 v collector-emitter saturation voltage v ce(sat) i c = -50ma, i b = -5ma -0.5 v v be(sat) i c = -10ma, i b = -1ma -1 v base-emitter saturation voltage v be(sat) i c = -50ma, i b = -5ma -1 v transition frequency f t v ce =-10v, i c =-10ma f =30mhz 100 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 6 pf to-92 1.emitter 2.base 3.collector 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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